Evaluation of surface oxide film thickness using photoelectron spectroscopy.
Calculate the oxide film thickness of the SiO2 surface oxide film on the Si substrate using photoelectron spectroscopy!
In the process of forming an oxide film, controlling the thickness of the oxide film is one of the very important factors. Therefore, we estimated the thickness of the surface oxide film non-destructively using photoelectron spectroscopy. In samples covered with a thin oxide film, many elemental photoelectron peaks show a two-peak structure corresponding to the oxide component and the substrate component. By measuring the spectral intensity of each component, we can estimate the thickness of the oxide film. There are several analytical methods to determine film thickness non-destructively, but compared to other methods, the ability to estimate the thickness at specific locations is a characteristic of this method. *For more detailed information, please refer to the attached PDF document. For further inquiries, feel free to contact us.*
- 企業：東芝ナノアナリシス
- 価格：Other
